characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, i d = 4a) zero gate voltage drain current (v ds = 1200v, v gs = 0v) zero gate voltage drain current (v ds = 960v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5849 rev a 6-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms ana volts min typ max 1200 8 1.600 250 1000 100 24 apt1201r6bvfr_svfr 1200 8 32 3040 280 2.24 -55 to 150 300 8 30 1210 g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com apt1201r6bvfr apt1201r6svfr 1200v 8a 1.600 ?? ?? ? svfr to-247 d 3 pak bvfr power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage to-247 or surface mount d 3 pak package power mos v ? fredfet fast recovery body diode downloaded from: http:///
dynamic characteristics apt1201r6bvfr_svfr 050-5849 rev a 6-2004 source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -i d [cont.]) peak diode recovery dv / dt 5 reverse recovery time(i s = -i d [cont.], di / dt = 100a/s) reverse recovery charge(i s = -i d [cont.], di / dt = 100a/s) peak recovery current(i s = -i d [cont.], di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 0.5 v dss i d = i d [cont.] @ 25c v gs = 15v v dd = 0.5 v dss i d = i d [cont.] @ 25c r g = 1.6 ? min typ max 3050 3660 255 360 125 190 155 230 15 23 78 115 12 24 10 20 50 75 15 30 unit pf nc ns min typ max 8 32 1.3 18 t j = 25c 220 t j = 125c 450 t j = 25c 1.0 t j = 125c 3.0 t j = 25c 10 t j = 125c 14 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 37.81mh, r g = 25 ? , peak i l = 8a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s i d - 8a di / dt 700a/s v r 1200v t j 150 c apt reserves the right to change, without notice, the specifications and information contained herein. thermal characteristics symbol r jc r ja min typ max 0.45 40 unit c/w characteristicjunction to case junction to ambient z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.50.1 0.050.01 0.0050.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) apt1201r6bvfr_svfr 050-5849 rev a 6-2004 0 100 200 300 400 500 600 0 3 6 9 12 15 18 012 3 45 67 8 0 4 8 12 16 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 10 86 4 2 0 1.31.2 1.1 1.0 0.9 1.151.10 1.05 1.00 0.95 0.90 0.85 1.21.1 1.0 0.9 0.8 0.7 0.6 10 86 4 2 0 10 86 4 2 0 8 6 4 2 0 2.52.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle 4.5v v gs =10v v gs =20v t j = +25c t j = -55c t j = +25c t j = -55c 4v v gs =5.5v, 6v, 7v, 10v &15v t j = +125c t j = +125c normalized to v gs = 10v @ 0.5 i d [cont.] 4.5v 4v v gs =5.5v, 6v, 7v, 10v &15v downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) apt1201r6bvfr_svfr 050-5849 rev a 6-2004 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. to - 247 package outline (bvfr) d 3 pak package outline (svfr) 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc{2 plcs.} 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) 0.56 (.022) dimensions in millimeters (inches) heat sink (drain)and leads are plated 2.40 (.094)2.70 (.106) (base of lead) drain(heat sink) 1.98 (.078)2.08 (.082) gate drain source 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) drain drain source gate 5.45 (.215) bsc dimensions in millimeters and (inches) 2-plcs. 1 5 10 50 100 500 1200 .01 .1 1 10 50 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t c =+25c t j =+150c single pulse 5010 51 0.50.1 2016 12 84 0 i d = i d [cont.] 15,00010,000 5,0001,000 500100 5050 10 51 .5.1 operation here limited by r ds (on) t j =+150c t j =+25c c rss c oss c iss v ds =600v 10s100s 1ms 10ms 100ms dc v ds =240v v ds =120v downloaded from: http:///
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